|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX30ASJ-03 HIGH-SPEED SWITCHING USE FX30ASJ-03 OUTLINE DRAWING 6.5 5.0 0.2 4 Dimensions in mm 5.5 0.2 1.5 0.2 0.5 0.1 1.0 max 2.3 min 10 max 1.0 A 0.5 0.2 0.8 0.9 max 2.3 2.3 2.3 1 2 3 3 * 4V DRIVE * VDSS ............................................................... -30V * rDS (ON) (MAX) ................................................ 61m * ID .................................................................... -30A * Integrated Fast Recovery Diode (TYP.) ...........50ns APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. 1 1 2 3 4 24 GATE DRAIN SOURCE DRAIN MP-3 MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg -- (Tc = 25C) Parameter Drain-source voltage Gate-source voltage VGS = 0V VDS = 0V Conditions Ratings -30 20 -30 -120 -30 -30 -120 35 -55 ~ +150 -55 ~ +150 Unit V V A A A A A W C C g Jan.1999 Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) L = 10H Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value 0.26 P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX30ASJ-03 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter (Tch = 25C) Test conditions ID = -1mA, VDS = 0V VGS = 20V, VDS = 0V VDS = -30V, VGS = 0V ID = -1mA, VDS = -10V ID = -15A, VGS = -10V ID = -5A, VGS = -4V ID = -15A, VGS = -10V ID = -15A, VDS = -10V VDS = -10V, VGS = 0V, f = 1MHz Limits Min. -30 -- -- -1.3 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- -1.8 48 96 -0.72 11.9 2460 410 170 20 84 123 60 -1.0 -- 50 Max. -- 0.1 -0.1 -2.3 61 120 -0.92 -- -- -- -- -- -- -- -- -1.5 3.57 -- Unit V A mA V m m V S pF pF pF ns ns ns ns V C/W ns Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = -15V, ID = -15A, VGS = -10V, RGEN = RGS = 50 IS = -15A, VGS = 0V Channel to case IS = -15A, dis/dt = 50A/s PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA -2 -102 40 -7 -5 -3 -2 tw = 10s 100s 1ms 10ms DC TC = 25C Single Pulse 30 -101 -7 -5 -3 -2 20 10 -100 -7 -5 0 0 50 100 150 200 -3 -2 -2 -3 -5-7-100 -2 -3 -5-7-101 -2 -3 -5-7-102 -2 CASE TEMPERATURE TC (C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) -50 VGS = -10V OUTPUT CHARACTERISTICS (TYPICAL) -20 VGS = -10V -8V -6V -5V PD = 35W -4V -7V -8V -6V DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) -40 -5V -16 -30 -12 -20 -4V Tc = 25C Pulse Test PD = 35W -3V -8 Tc = 25C Pulse Test -3V -10 -4 0 0 -1.0 -2.0 -3.0 -4.0 -5.0 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Jan.1999 P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX30ASJ-03 HIGH-SPEED SWITCHING USE ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 200 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (m) Tc = 25C Pulse Test ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) -5.0 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) Tc = 25C Pulse Test -4.0 160 -3.0 ID = -50A 120 VGS = -4V -2.0 -30A 80 -10V -1.0 -15A 40 0 -10-1 -2 -3 -5 -7-100 -2 -3 -5-7 -101 -2 -3 -5 -7-102 DRAIN CURRENT ID (A) 0 0 -2 -4 -6 -8 -10 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) -50 DRAIN CURRENT ID (A) Tc = 25C VDS = -10V Pulse Test 2 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) VDS = -10V Pulse Test FORWARD TRANSFER ADMITTANCE yfs (S) -40 102 7 5 4 3 2 -30 75C 125C TC = 25C -20 101 7 5 4 3 -10 0 0 -2 -4 -6 -8 -10 -100 2 -2 -3 -5 -7 -101 -2 -3 -5 -7 -102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 Tch = 25C SWITCHING CHARACTERISTICS (TYPICAL) 103 Tch = 25C 7 VGS = -10V 5 VDD = -15V 4 RGEN = RGS = 50 3 2 td(off) 104 f = 1MHZ 3 2 Ciss 103 7 5 3 2 Coss Crss SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 7 VGS = 0V 5 102 7 5 4 3 2 tf tr td(on) 102 7 5 3 2 -3 -5-7-100 -2 -3 -5-7 -101 -2 3 -5-7 -102 -2 -3 101 -5 -7 -100 -2 -3 -5 -7-101 -2 -3 -5 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Jan.1999 P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX30ASJ-03 HIGH-SPEED SWITCHING USE SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) -50 VGS = 0V Pulse Test GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) -10 Tch = 25C ID = -30A SOURCE CURRENT IS (A) -8 -40 -6 -30 -4 VDS = -10V -20V -25V -20 TC = 25C 75C 125C -2 -10 0 0 10 20 30 40 50 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 -4.0 7 5 4 3 2 VGS = -10V ID = 1/2ID Pulse Test THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = -10V ID = -1mA GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 50 100 150 -3.2 -2.4 100 7 5 4 3 2 -1.6 -0.8 10-1 -50 0 0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = -1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 D=1 3 0.5 2 0.2 7 0.1 5 3 2 0.05 0.02 0.01 Single Pulse PDM tw T D= tw T 1.2 100 1.0 0.8 10-1 7 5 3 2 0.6 0.4 -50 0 50 100 150 10-2 -4 10 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Jan.1999 CHANNEL TEMPERATURE Tch (C) |
Price & Availability of FX30ASJ-03 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |